High-Definition Nanoimprint Stamp Fabrication by Atomic Layer Etching-Reference-Cited by-同舟云学术

High-Definition Nanoimprint Stamp Fabrication by Atomic Layer Etching

Published:2018-05-22 Issue:6 Volume:1 Page:2476-2482
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Khan Sabbir A.¹^ORCID,Suyatin Dmitry B.¹,Sundqvist Jonas²,Graczyk Mariusz¹,Junige Marcel³^ORCID,Kauppinen Christoffer⁴^ORCID,Kvennefors Anders¹,Huffman Maria¹,Maximov Ivan¹

Affiliation:

1. Division of Solid State Physics and NanoLund, Lund University, P.O. Box 118, SE-22100 Lund, Sweden

2. Fraunhofer Institute for Ceramic Technologies and Systems IKTS, Winterbergstrasse 28, 01277 Dresden, Germany

3. Institute of Semiconductors and Microsystems, Technische Universität Dresden, D-01062 Dresden, Germany

4. Department of Electronics and Nanoengineering, Micronova, Aalto University, P.O. Box 13500, FI-00076 Aalto, Finland

Funder

Stiftelsen f?r?Strategisk Forskning

Vardalinstitutet

NanoLund, Lund University

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.8b00509

Reference31 articles.

1. Atomic Layer Etching at the Tipping Point: An Overview

2. Overview of atomic layer etching in the semiconductor industry

3. Atomic layer etching of 3D structures in silicon: Self-limiting and nonideal reactions

4. Yoder, M. N. Atomic Layer Etching. U.S. Patent 4,756,794A, 1988.

5. Atomic Layer Etching: What Can We Learn from Atomic Layer Deposition?

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