Sb2Te3 Growth Study Reveals That Formation of Nanoscale Charge Carrier Domains Is an Intrinsic Feature Relevant for Electronic Applications-Reference-Cited by-同舟云学术

Sb2Te3 Growth Study Reveals That Formation of Nanoscale Charge Carrier Domains Is an Intrinsic Feature Relevant for Electronic Applications

Published:2018-11-05 Issue:12 Volume:1 Page:6834-6842
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Lewin Martin¹^ORCID,Mester Lars¹,Saltzmann Tobias²,Chong Seung-Jae²,Kaminski Marvin¹,Hauer Benedikt¹,Pohlmann Marc¹,Mio Antonio M.¹,Wirtssohn Matti¹,Jost Peter¹,Wuttig Matthias¹³^ORCID,Simon Ulrich²³,Taubner Thomas¹³

Affiliation:

1. Institute of Physics (IA), RWTH Aachen University, 52056 Aachen, Germany

2. Institute of Inorganic Chemistry, RWTH Aachen University, 52056 Aachen, Germany

3. JARA − Fundamentals of Future Information Technology, 52056 Aachen, Germany

Funder

Deutsche Forschungsgemeinschaft

Ministerium f?r Innovation, Wissenschaft und Forschung des Landes Nordrhein-Westfalen

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.8b01660

Reference45 articles.

1. Thermoelectric transport and Hall measurements of low defect Sb2Te3thin films grown by atomic layer deposition

2. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

3. Phase-change materials for rewriteable data storage

4. Phase-change materials for non-volatile photonic applications

5. Interfacial phase-change memory

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