On the Application Potential of Chemically Tailored Metal Oxide and Higher Chalcogenide Nanoparticles for Nanoscale Resistive Switching Devices

Author:

Frommelius Anne1ORCID,Ohlerth Thorsten1ORCID,Noyong Michael1ORCID,Simon Ulrich1ORCID

Affiliation:

1. RWTH Aachen University Institute of Inorganic Chemistry Landoltweg 1 a 52074 Aachen Germany

Abstract

Resistive switching (RS) for nonvolatile data storage is a highly relevant field of research. Up to now, RS devices are fabricated via semiconductor processing technologies. This poses the question of whether integration of chemically tailored nanoparticles, either consisting of valence change or phase change materials, can be integrated in nanoelectrode configurations in order to explore their functionality for RS applications. This review discusses the RS properties of such nanoparticles by means of selected examples of both nanoparticle assemblies as well as on the individual particle level. Although this field of research is rather unexplored, it becomes evident that chemically tailored nanoparticles bear great potential for RS applications.

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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