Photoresponse of Graphene-Gated Graphene-GaSe Heterojunction Devices-Reference-Cited by-同舟云学术

Photoresponse of Graphene-Gated Graphene-GaSe Heterojunction Devices

Published:2018-07-31 Issue:8 Volume:1 Page:3895-3902
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Kim Wonjae¹^ORCID,Arpiainen Sanna¹,Xue Hui²,Soikkeli Miika¹,Qi Mei²,Sun Zhipei²³^ORCID,Lipsanen Harri²,Chaves Ferney A.⁴,Jiménez David⁴,Prunnila Mika¹³

Affiliation:

1. VTT Technical Research Center of Finland Ltd., P.O. Box 1000, FI-02044 VTT, Finland

2. Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, Espoo 02150, Finland

3. QTF Centre of Excellence, Department of Applied Physics, Aalto University, Aalto FI-00076, Finland

4. Department d’Enginyeria Electrònica, Escola d’Enginyeria, Universitat Autònoma de Barcelona, Campus UAB, Bellaterra E-08193, Spain

Funder

FP7 People: Marie-Curie Actions

Ministerio de Econom?a y Competitividad

Tekes

H2020 Future and Emerging Technologies

Suomen Akatemia

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

http://pubs.acs.org/doi/pdf/10.1021/acsanm.8b00684

Reference46 articles.

1. Photoconductivity of Gallium Selenide Crystals

2. Mobility of Charge Carriers in Semiconducting Layer Structures

3. Single-layer MoS2 transistors

4. 2D transition metal dichalcogenides

5. Mono- and Bilayer WS2 Light-Emitting Transistors

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