Progress in photodetector devices utilizing transition metal dichalcogenides

Author:

Li Xin12,Aftab Sikandar3ORCID,Hussain Sajjad4,Kabir Fahmid5,Al-Sehemi Abdullah G.67ORCID,Aslam Muhammad8,Kim Jae Hong9,Goud Burragoni Sravanthi9

Affiliation:

1. State Key Laboratory of Pulsed Power Laser Technology, National University of Defense Technology, Hefei 230037, Anhui, China

2. Anhui Laboratory of Advanced Laser Technology, Hefei 230037, Anhui, China

3. Department of Intelligent Mechatronics Engineering, Sejong University, Seoul 05006, South Korea

4. Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea

5. School of Engineering Science, Simon Fraser University, Burnaby, British Columbia V5A 1S6, Canada

6. Research Center for Advanced Materials Science (RCAMS), King Khalid University, Abha, 61413, Saudi Arabia

7. Department of Chemistry, College of Science, King Khalid University, Abha, 61413, Saudi Arabia

8. Institute of Physics and Technology, Ural Federal University, Mira Str. 19, 620002 Ekaterinburg, Russia

9. Department of Chemical Engineering, Yeungnam University, 214-1, Dae-hakro 280, Gyeongsan, Gyeongbuk, 712-749, South Korea

Abstract

Transition metal dichalcogenides (TMDs) with two dimensions (2D) exhibit remarkable electronic and optoelectronic properties that have made them a highly promising platform for the development of photodetectors (PDs).

Funder

Ministry of Science and ICT, South Korea

Research Center for Advanced Materials Science, King Khalid University

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

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