Understanding Electronic Properties and Tunable Schottky Barriers in a Graphene/Boron Selenide van der Waals Heterostructure-Reference-Cited by-同舟云学术

Understanding Electronic Properties and Tunable Schottky Barriers in a Graphene/Boron Selenide van der Waals Heterostructure

Author:

Nguyen Son-Tung¹,Nguyen Cuong Q.²³,Ang Yee Sin⁴^ORCID,Van Hoang Nguyen⁵^ORCID,Hung Nguyen Manh⁵,Nguyen Chuong V.⁵^ORCID

Affiliation:

1. Faculty of Electrical Engineering, Hanoi University of Industry, Hanoi 100000, Vietnam

2. Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam

3. Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam

4. Science Mathematics and Technology Cluster, Singapore University of Technology and Design, Singapore 487372, Singapore

5. Department of Materials Science and Engineering, Le Quy Don Technical University, Hanoi 100000, Vietnam

Publisher

American Chemical Society (ACS)

Subject

Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science

Link

Reference53 articles.

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献