Significant Increase in Band Gap and Emission Efficiency of In2O3 Quantum Dots by Size-Tuning around 1 nm in Supermicroporous Silicas
Author:
Affiliation:
1. Department of Applied Chemistry, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan
2. Tokyo Metropolitan Industrial Technology Research Institute, 2-4-10 Aomi, Koto-ku, Tokyo 135-0064, Japan
Funder
Ministry of Education, Culture, Sports, Science and Technology
Kato Foundation for Promotion of Science
Publisher
American Chemical Society (ACS)
Subject
Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.langmuir.6b04181
Reference24 articles.
1. Optical Properties of Indium Oxide
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5. Electrical and structural properties of low resistivity tin‐doped indium oxide films
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