Selection of Di(meth)acrylate Monomers for Low Pollution of Fluorinated Mold Surfaces in Ultraviolet Nanoimprint Lithography-Reference-Cited by-同舟云学术

Selection of Di(meth)acrylate Monomers for Low Pollution of Fluorinated Mold Surfaces in Ultraviolet Nanoimprint Lithography

Published:2015-04-01 Issue:14 Volume:31 Page:4188-4195
ISSN:0743-7463
Container-title:Langmuir
language:en
Short-container-title:Langmuir

Author:

Nakagawa Masaru¹²,Kobayashi Kei¹,Hattori Azusa N.³,Ito Shunya¹,Hiroshiba Nobuya¹,Kubo Shoichi¹,Tanaka Hidekazu³

Affiliation:

1. Polymer • Hybrid Materials Research Center, Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

2. Japan Science and Technology Agency (JST), Core Research Evolutional Science and Technology (CREST), 7 Gobancho, Chiyoda, Tokyo 102-0076, Japan

3. Institute of Scientific and Industrial Research (ISIR), Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

Funder

Ministry of Education, Culture, Sports, Science, and Technology

Publisher

American Chemical Society (ACS)

Subject

Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.langmuir.5b00325

Reference31 articles.

1. Imprint of sub‐25 nm vias and trenches in polymers

2. Fabrication of 5nm linewidth and 14nm pitch features by nanoimprint lithography

3. Combined helium ion beam and nanoimprint lithography attains 4 nm half-pitch dense patterns

4. 6 nm half-pitch lines and 0.04 µm2static random access memory patterns by nanoimprint lithography

5. Nanoimprint lithography and future patterning for semiconductor devices

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