Atomic Layer Epitaxy of h-BN(0001) Multilayers on Co(0001) and Molecular Beam Epitaxy Growth of Graphene on h-BN(0001)/Co(0001)
Author:
Affiliation:
1. Department of Chemistry, University of North Texas, Denton, Texas 76203, United States
2. Department of Materials Science and Engineering, University of Wisconsin, Madison, Wisconsin 53706, United States
Funder
Defense Advanced Research Projects Agency
Microelectronics Advanced Research Corporation
Division of Electrical, Communications and Cyber Systems
Publisher
American Chemical Society (ACS)
Subject
Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.langmuir.5b03653
Reference32 articles.
1. Ni(111)|graphene|h-BN junctions as ideal spin injectors
2. Brillouin zone spin filtering mechanism of enhanced tunneling magnetoresistance and correlation effects in aCo(0001)/h -BN/Co(0001)magnetic tunnel junction
3. Boron nitride substrates for high mobility chemical vapor deposited graphene
4. Vertical Graphene Base Transistor
5. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
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