Plasma-Induced Nonvolatile Resistive Switching with Extremely Low SET Voltage in TiOxFy with AgF Nanoparticles-Reference-Cited by-同舟云学术

Plasma-Induced Nonvolatile Resistive Switching with Extremely Low SET Voltage in TiOxFy with AgF Nanoparticles

Published:2016-11-22 Issue:48 Volume:8 Page:32956-32962
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Sun Xiangyu¹,Wu Chuangui¹,Shuai Yao¹,Pan Xinqiang¹,Luo Wenbo¹,You Tiangui²,Bogusz Agnieszka²,Du Nan²,Li Yanrong¹,Schmidt Heidemarie²

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China

2. Material Systems for Nanoelectronics, Technische Universität Chemnitz, Chemnitz 09126, Germany

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b11049

Reference40 articles.

1. Who Wins the Nonvolatile Memory Race?

2. Towards the Development of Flexible Non-Volatile Memories

3. Nanoionics-based resistive switching memories

4. NiO Resistive Random Access Memory Nanocapacitor Array on Graphene

5. Flexible Crossbar-Structured Resistive Memory Arrays on Plastic Substrates via Inorganic-Based Laser Lift-Off

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