NiO Resistive Random Access Memory Nanocapacitor Array on Graphene-Reference-Cited by-同舟云学术

NiO Resistive Random Access Memory Nanocapacitor Array on Graphene

Published:2010-05-03 Issue:5 Volume:4 Page:2655-2658
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Son Jong Yeog¹,Shin Young-Han²,Kim Hyungjun³,Jang Hyun M.¹⁴

Affiliation:

1. Department of Materials Science and Engineering, and Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea

2. Department of Physics, University of Ulsan, Ulsan 680-749, Korea

3. School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea

4. Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn100234x

Reference34 articles.

1. Reproducible switching effect in thin oxide films for memory applications

2. A [2]Catenane-Based Solid State Electronically Reconfigurable Switch

3. Current-driven insulator–conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals

4. Programmable polymer thin film and non-volatile memory device

5. A 160-kilobit molecular electronic memory patterned at 1011 bits per square centimetre

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