Interfacial Ion Intermixing Effect on Four-Resistance States in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 Multiferroic Tunnel Junctions-Reference-Cited by-同舟云学术

Interfacial Ion Intermixing Effect on Four-Resistance States in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 Multiferroic Tunnel Junctions

Published:2016-04-15 Issue:16 Volume:8 Page:10422-10429
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Huang Weichuan¹,Lin Yue¹,Yin Yuewei¹²,Feng Lei¹,Zhang Dalong¹,Zhao Wenbo¹,Li Qi²,Li Xiaoguang¹³

Affiliation:

1. Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, Hefei 230026, P. R. China

2. Department of Physics, Pennsylvania State University, University Park 16802, United States

3. Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, P. R. China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Division of Materials Research

Hefei Science Center, Chinese Academy of Sciences

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b02150

Reference55 articles.

1. Emerging Nanoscale Memory and Logic Devices: A Critical Assessment

2. The development of organic spin valves from unipolar to bipolar operation

3. Non-Volatile 180° Magnetization Reversal by an Electric Field in Multiferroic Heterostructures

4. Spin-dependent tunnelling in magnetic tunnel junctions

5. Magnetic tunnel junctions

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