Second‐Order Memristor Based on All‐Oxide Multiferroic Tunnel Junction for Biorealistic Emulation of Synapses-Reference-Cited by-同舟云学术

Second‐Order Memristor Based on All‐Oxide Multiferroic Tunnel Junction for Biorealistic Emulation of Synapses

Published:2022-07-13 Issue:10 Volume:8 Page:2200421
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Khanas Anton¹,Hebert Christian¹,Becerra Loïc¹,Portier Xavier²,Jedrecy Nathalie¹^ORCID

Affiliation:

1. Institut des Nano Sciences de Paris (INSP) CNRS UMR 7588 Sorbonne Université 4 Place Jussieu Paris Cedex 05 75252 France

2. Centre de recherche sur les Ions les MAtériaux et la Photonique (CIMAP) CEA CNRS UMR 6252 ENSICAEN Normandie Université 6 Boulevard Maréchal Juin Caen 14050 France

Funder

Agence Nationale de la Recherche

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202200421

Reference56 articles.

1. Nanoscale Memristor Device as Synapse in Neuromorphic Systems

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4. A quantitative description of membrane current and its application to conduction and excitation in nerve

5. Ca2+ Entry via postsynaptic voltage-sensitive Ca2+ channels can transiently potentiate excitatory synaptic transmission in the hippocampus

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