Enhanced Light Emission from Monolayer Semiconductors by Forming Heterostructures with ZnO Thin Films-Reference-Cited by-同舟云学术

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Enhanced Light Emission from Monolayer Semiconductors by Forming Heterostructures with ZnO Thin Films

Published:2016-10-14 Issue:42 Volume:8 Page:28809-28815
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kim Min Su¹²,Roy Shrawan¹³,Lee Jubok¹³,Kim Byung Gu⁴,Kim Hyun¹³,Park Ji-Hoon¹²,Yun Seok Joon¹³,Han Gang Hee¹²,Leem Jae-Young⁴,Kim Jeongyong¹³

Affiliation:

1. Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea

2. Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea

3. Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea

4. Department of Nanoscience & Engineering, Inje University, Gimhae 621-749, Republic of Korea

Funder

Institute for Basic Science

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b08003

Reference41 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Emerging Photoluminescence in Monolayer MoS2

3. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

4. Electroluminescence in Single Layer MoS2

5. Self-Driven Photodetector and Ambipolar Transistor in Atomically Thin GaTe-MoS2 p–n vdW Heterostructure

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