Grouped and Multistep Nanoheteroepitaxy: Toward High-Quality GaN on Quasi-Periodic Nano-Mask-Reference-Cited by-同舟云学术

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Grouped and Multistep Nanoheteroepitaxy: Toward High-Quality GaN on Quasi-Periodic Nano-Mask

Published:2016-07-08 Issue:28 Volume:8 Page:18208-18214
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Feng Xiaohui¹,Yu Tongjun¹,Wei Yang²,Ji Cheng¹,Cheng Yutian¹,Zong Hua¹,Wang Kun¹,Yang Zhijian¹,Kang Xiangning¹,Zhang Guoyi¹,Fan Shoushan²

Affiliation:

1. State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P. R. China

2. Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, P. R. China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b05636

Reference37 articles.

1. Solid-State Light Sources Getting Smart

2. Nitride-based semiconductors for blue and green light-emitting devices

3. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

4. Metal organic vapour phase epitaxy of GaN and lateral overgrowth

5. InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode

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4. Field emission of GaN nanofilms on Si substrates enhanced by hydrogen plasma treatment;Surface Topography: Metrology and Properties;2021-02-03

5. Impact of carbon nanotube pattern layers on gallium nitride-based light emitting diodes;Semiconductor Science and Technology;2020-09-29

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