Reversible Phase Change Characteristics of Cr-Doped Sb2Te3 Films with Different Initial States Induced by Femtosecond Pulses
Author:
Affiliation:
1. University of the Chinese Academy of Sciences, Beijing 100049, China
2. Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
Funder
Science and Technology Commission of Shanghai Municipality
National Natural Science Foundation of China
Chinese Academy of Sciences
National Integrate Circuit Research Program of China
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.6b06667
Reference27 articles.
1. Reversible Electrical Switching Phenomena in Disordered Structures
2. Phase Change Materials and Their Application to Nonvolatile Memories
3. Phase-change materials for rewriteable data storage
4. Time-Resolved Investigation of Nanosecond Crystal Growth in Rapid-Phase-Change Materials: Correlation with the Recording Speed of Digital Versatile Disc Media
5. Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements
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