Parasitic Capacitance Effect on Dynamic Performance of Aerosol-Jet-Printed Sub 2 V Poly(3-hexylthiophene) Electrolyte-Gated Transistors-Reference-Cited by-同舟云学术

Parasitic Capacitance Effect on Dynamic Performance of Aerosol-Jet-Printed Sub 2 V Poly(3-hexylthiophene) Electrolyte-Gated Transistors

Published:2016-09-30 Issue:40 Volume:8 Page:27012-27017
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zare Bidoky Fazel¹,Frisbie C. Daniel¹

Affiliation:

1. Department of Chemistry and ‡Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States

Funder

Division of Electrical, Communications and Cyber Systems

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b08396

Reference25 articles.

1. Low voltage electrolyte-gated organic transistors making use of high surface area activated carbon gate electrodes

2. Schmitt Trigger Using a Self-Healing Ionic Liquid Gated Transistor

3. High-Capacitance Ion Gel Gate Dielectrics with Faster Polarization Response Times for Organic Thin Film Transistors

4. Electrolyte-Gated Transistors for Organic and Printed Electronics

5. Active Matrix Electronic Skin Strain Sensor Based on Piezopotential-Powered Graphene Transistors

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