Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer
Author:
Affiliation:
1. Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e Microsistemi, Strada VIII, n. 5, Zona Industriale, 95121 Catania, Italy
2. STMicroelectronics, Stradale Primosole 50, Zona Industriale, 95121 Catania, Italy
Funder
Ministero dell?Istruzione, dell?Universit? e della Ricerca
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.6b15190
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