Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer-Reference-Cited by-同舟云学术

Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer

Published:2017-02-13 Issue:8 Volume:9 Page:7761-7771
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Fisichella Gabriele¹,Schilirò Emanuela¹,Di Franco Salvatore¹,Fiorenza Patrick¹,Lo Nigro Raffaella¹,Roccaforte Fabrizio¹,Ravesi Sebastiano²,Giannazzo Filippo¹^ORCID

Affiliation:

1. Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e Microsistemi, Strada VIII, n. 5, Zona Industriale, 95121 Catania, Italy

2. STMicroelectronics, Stradale Primosole 50, Zona Industriale, 95121 Catania, Italy

Funder

Ministero dell?Istruzione, dell?Universit? e della Ricerca

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b15190

Reference31 articles.

1. High-frequency, scaled graphene transistors on diamond-like carbon

2. Vertical Graphene Base Transistor

3. Graphene integration with nitride semiconductors for high power and high frequency electronics

4. Highly air stable passivation of graphene based field effect devices

5. Fabrication of high-performance graphene field-effect transistor with solution-processed Al2O3 sensing membrane

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