Graphene integration with nitride semiconductors for high power and high frequency electronics-Reference-Cited by-同舟云学术

Graphene integration with nitride semiconductors for high power and high frequency electronics

Published:2016-10-17 Issue:4 Volume:214 Page:1600460
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Giannazzo F.¹,Fisichella G.¹,Greco G.¹,La Magna A.¹,Roccaforte F.¹,Pecz B.²,Yakimova R.³,Dagher R.⁴⁵,Michon A.⁴,Cordier Y.⁴

Affiliation:

1. CNR-IMM, Strada VIII, 5; Zona Industriale; 95121 Catania Italy

2. Institute for Technical Physics and Materials Science Research; Centre for Energy Research; HAS Budapest Hungary

3. Department of Physics, Chemistry and Biology; Linköping University; Linköping Sweden

4. CRHEA-CNRS; Rue Bernard Gregory; 06560 Valbonne France

5. Université de Nice Sophia-Antipolis; 28 Av. Valrose 06103 Nice France

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201600460/fullpdf

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