Low Temperature Deposition of High-k/Metal Gate Stacks on High-Sn Content (Si)GeSn-Alloys-Reference-Cited by-同舟云学术

Low Temperature Deposition of High-k/Metal Gate Stacks on High-Sn Content (Si)GeSn-Alloys

Author:

Schulte-Braucks C.¹,von den Driesch N.¹,Glass S.¹,Tiedemann A. T.¹,Breuer U.²,Besmehn A.²,Hartmann J.-M.³,Ikonic Z.⁴,Zhao Q. T.¹,Mantl S.¹,Buca D.¹

Affiliation:

1. Peter Gruenberg Institute 9 (PGI 9) and JARA-FIT, Forschungszentrum Juelich GmbH, 52425 Juelich, Germany

2. Zentralinstitut für Engineering, Elektronik und Analytik (ZEA-3), Forschungszentrum Juelich GmbH, 52425 Juelich, Germany

3. Univ. Grenoble Alpes, 38000 Grenoble, France and CEA, LETI, Minatec Campus, 38054 Grenoble, France

4. Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom

Funder

Bundesministerium für Bildung und Forschung

Seventh Framework Programme

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

Reference49 articles.

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