Room‐Temperature Negative Differential Resistance and High Tunneling Current Density in GeSn Esaki Diodes-Reference-Cited by-同舟云学术

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Room‐Temperature Negative Differential Resistance and High Tunneling Current Density in GeSn Esaki Diodes

Published:2022-09-13 Issue:41 Volume:34 Page:2203888
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Advanced Materials

Author:

Liu Chia‐You¹,Tien Kai‐Ying¹,Chiu Po‐Yuan¹,Wu Yu‐Jui¹,Chuang Yen¹,Kao Hsiang‐Shun¹,Li Jiun‐Yun¹²³⁴^ORCID

Affiliation:

1. Graduate Institute of Electronics Engineering National Taiwan University Taipei 10617 Taiwan

2. Department of Electrical Engineering National Taiwan University Taipei 10617 Taiwan

3. Graduate School of Advanced Technology National Taiwan University Taipei 10617 Taiwan

4. Taiwan Semiconductor Research Institute Hsinchu 30078 Taiwan

Funder

National Applied Research Laboratories

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202203888

Reference37 articles.

1. I-MOS: a novel semiconductor device with a subthreshold slope lower than kT/q

2. Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

3. A U-Gate InGaAs/GaAsSb Heterojunction TFET of Tunneling Normal to the Gate With Separate Control Over ON- and OFF-State Current

4. Phonon-Assisted Tunneling in Silicon and Germanium Esaki Junctions

5. Phonon Spectra of Ge-Si Alloys

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1. Ge1−Sn layers with x∼0.25 on InP(001) substrate grown by low-temperature molecular beam epitaxy reaching 70 °C and in-situ Sb doping;Materials Science in Semiconductor Processing;2024-06

2. Recent progress in undoped group-IV heterostructures for quantum technologies;Materials for Quantum Technology;2024-02-26

3. Broken-gap energy alignment in two-dimensional van der Waals heterostructures for multifunctional tunnel diodes;Physical Chemistry Chemical Physics;2024

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