Theoretical Study of Structural and Electronic Properties of H-Silsesquioxanes
Author:
Affiliation:
1. Department of Physics, Michigan Technological University, Houghton, Michigan 49931, Dow Corning Corporation, Midland, Michigan 48686, and Molecular Simulations Inc., San Diego, California 92121
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/jp981840r
Reference27 articles.
1. Oligomeric silsesquioxanes, (HSiO3/2)n
2. The higher hydridospherosiloxanes: synthesis and structures of HnSinO1.5n (n = 12, 14, 16, 18)
3. A new route to trimethylsilylated spherosilicates. Synthesis and structure of [Si12O18](OSiMe3)12, D3h-[Si14O21](OSiMe3)14, and C2v-[Si14O21](OSiMe3)14
4. Vibrations of H8Si8O12, D8Si8O12, and H10Si10O15 As Determined by INS, IR, and Raman Experiments
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