Nitrogen-Doped Partially Reduced Graphene Oxide Rewritable Nonvolatile Memory-Reference-Cited by-同舟云学术

Nitrogen-Doped Partially Reduced Graphene Oxide Rewritable Nonvolatile Memory

Published:2013-04-01 Issue:4 Volume:7 Page:3607-3615
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Seo Sohyeon¹,Yoon Yeoheung²,Lee Junghyun¹,Park Younghun¹,Lee Hyoyoung¹²

Affiliation:

1. National Creative Research Initiative, Center for Smart Molecular Memory, Department of Chemistry, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746, Korea,

2. Department of Energy Science, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746, Korea

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn400588u

Reference28 articles.

1. Polymer and Organic Nonvolatile Memory Devices

2. Organic Thin Film Transistors for Large Area Electronics

3. Electric Bistability in Pentacene Film-Based Transistor Embedding Gold Nanoparticles

4. Programmable Bipolar and Unipolar Nonvolatile Memory Devices Based on Poly(2-(N-carbazolyl)ethyl methacrylate) End-Capped with Fullerene

5. Flexible Multilevel Resistive Memory with Controlled Charge Trap B- and N-Doped Carbon Nanotubes

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