Computational Study on the Growth of Gallium Nitride and a Possible Source of Oxygen Impurity
Author:
Affiliation:
1. Department of Spectroscopy, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032
Publisher
American Chemical Society (ACS)
Subject
Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/jp100332t
Reference55 articles.
1. Gas-Phase Reaction of Trimethylgallium and Ammonia: Experimental Determination of the Equilibrium Constant and ab Initio Calculations
2. Relationship between physical properties and gas purification in GaN grown by metalorganic vapor phase epitaxy
3. Comparison of trimethylgallium and triethylgallium for the growth of GaN
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