Relationship between physical properties and gas purification in GaN grown by metalorganic vapor phase epitaxy-Reference-Cited by-同舟云学术

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Relationship between physical properties and gas purification in GaN grown by metalorganic vapor phase epitaxy

Published:1998-12 Issue:1-4 Volume:195 Page:314-318
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

di Forte-Poisson M.A,Huet F,Romann A,Tordjman M,Lancefield D,Pereira E,Di Persio J,Pecz B

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference3 articles.

1. S. Nakamura, MRS Meeting, Boston, 1997.

2. S. Sriram, MRS Meeting, Boston, 1997.

3. Optical properties of Si-doped GaN

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4. Performance of InGaN/GaN light-emitting diodes grown using NH3with oxygen-containing impurities;Japanese Journal of Applied Physics;2014-07-07

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