Influence of Edge Energy on Modeling the Growth Kinetics of Quantum Dots
Author:
Affiliation:
1. Faculty of Radiophysics, Tomsk State University, Lenina 36, Tomsk 634050, Russia
Funder
Ministry of Education and Science of the Russian Federation
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cg501451b
Reference27 articles.
1. Molecular beam epitaxy of silicon–germanium nanostructures
2. Si/Ge nanostructures
3. Ge/Si Self-Assembled Quantum Dots and Their Optoelectronic Device Applications
4. Heterostructures with self-organized quantum dots of Ge on Si for optoelectronic devices
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