Radical Enhanced Atomic Layer Deposition of Tantalum Oxide-Reference-Cited by-同舟云学术

Radical Enhanced Atomic Layer Deposition of Tantalum Oxide

Published:2007-03-30 Issue:9 Volume:19 Page:2316-2320
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Niskanen Antti¹,Kreissig Ulrich¹,Leskelä Markku¹,Ritala Mikko¹

Affiliation:

1. Laboratory of Inorganic Chemistry, Department of Chemistry, P.O. Box 55, University of Helsinki, 00014 Helsinki, Finland, and Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, P.O. Box 510119, 01314 Dresden, Germany

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm0626482

Reference42 articles.

1. Lee, J. Y.; Lai, B. C. InHandbook of Thin Films Materials; Nalwa, H. S., Ed.; Academic Press: San Diego, CA, 2002; p 1.

2. Future Direction for a Diffusion Barrier in Future High-Density Volatile and Nonvolatile Memory Devices

3. Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications

4. Low-voltage pentacene thin-film transistors with Ta2O5 gate insulators and their reversible light-induced threshold voltage shift

5. Effects of heat treatment on Ta2O5 sensing membrane for low drift and high sensitivity pH-ISFET

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