Evolution of Electronic Structure as a Function of Layer Thickness in Group-VIB Transition Metal Dichalcogenides: Emergence of Localization Prototypes-Reference-Cited by-同舟云学术

Evolution of Electronic Structure as a Function of Layer Thickness in Group-VIB Transition Metal Dichalcogenides: Emergence of Localization Prototypes

Published:2015-01-13 Issue:2 Volume:15 Page:949-957
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Zhang Lijun¹²,Zunger Alex¹

Affiliation:

1. University of Colorado, Boulder, Colorado 80309, United States

2. College of Materials Science and Engineering, Jilin University, Changchun 130012, China

Funder

Basic Energy Sciences

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl503717p

Reference44 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

3. Two-Dimensional Crystals: Managing Light for Optoelectronics

4. Atomically ThinMoS2: A New Direct-Gap Semiconductor

5. Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2

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