Creating Graphene p–n Junctions Using Self-Assembled Monolayers-Reference-Cited by-同舟云学术

Creating Graphene p–n Junctions Using Self-Assembled Monolayers

Published:2012-09-04 Issue:9 Volume:4 Page:4781-4786
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Sojoudi Hossein¹,Baltazar Jose²,Tolbert Laren M.²,Henderson Clifford L.²,Graham Samuel¹

Affiliation:

1. Woodruff School of Mechanical Engineering and School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States

2. School of Chemistry and Biochemistry, Georgia Institute of Technology, Atlanta, Georgia 30332, United States

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am301138v

Reference35 articles.

1. Approaching ballistic transport in suspended graphene

2. Electric Field Effect in Atomically Thin Carbon Films

3. Two-dimensional gas of massless Dirac fermions in graphene

4. Controlling the Electronic Structure of Bilayer Graphene

5. Quantized Transport in Graphene p-n Junctions in a Magnetic Field

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