Spinel-Structured Gallium Oxynitride (Ga3O3N) Synthesis and Characterization: An Experimental and Theoretical Study-Reference-Cited by-同舟云学术

Spinel-Structured Gallium Oxynitride (Ga3O3N) Synthesis and Characterization: An Experimental and Theoretical Study

Published:2005-09-27 Issue:22 Volume:17 Page:5465-5472
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Soignard Emmanuel¹,Machon Denis¹,McMillan Paul F.¹,Dong Jianjun¹,Xu Bin¹,Leinenweber Kurt¹

Affiliation:

1. Departments of Geological Sciences and of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287, Department of Chemistry, University College London, U.K., Royal Institute of Great Britain, London, U.K., and Physics Department, Auburn University, Auburn, Alabama 36849

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm051224p

Reference39 articles.

1. Bandgap energy of cubic GaN

2. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN

3. Emerging gallium nitride based devices

4. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3

5. Ga2O3/Al2O3Prepared by Sol-Gel Method as a Highly Active Metal Oxide-Based Catalyst for NO Reduction by Propene in the Presence of Oxygen, H2O and SO2

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