3C–SiC Heteroepitaxial Growth by Vapor–Liquid–Solid Mechanism on Patterned 4H–SiC Substrate Using Si

3C–SiC Heteroepitaxial Growth by Vapor–Liquid–Solid Mechanism on Patterned 4H–SiC Substrate Using Si–Ge Melt

Published:2011-05-04 Issue:6 Volume:11 Page:2177-2182
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Lorenzzi J.¹,Lazar M.²,Tournier D.²,Jegenyes N.¹,Carole D.¹,Cauwet F.¹,Ferro G.¹

Affiliation:

1. Université Claude Bernard Lyon 1, CNRS, UMR 5615, Laboratoire des Multimatériaux et Interfaces 43 Bd du 11 Novembre 1918, 69622 Villeurbanne Cedex, France

2. Laboratoire Ampère, UMR-CNRS 5005, Bât. Léonard de Vinci, 21 avenue Jean Capelle, F 69621 Villeurbanne cedex

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg101487g

Reference14 articles.

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4. Trunek, A.J.; Neudeck, P.G.; Spry, D.J.Materials Science Forum;Trans Tech publications Ltd.:Switzerland, Vols556–557; 2007; pp.117–120.

5. Polytype transformations in SiC-epitaxial layers: The color cathodoluminescence-sem studies

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