Few-Electron Edge-State Quantum Dots in a Silicon Nanowire Field-Effect Transistor-Reference-Cited by-同舟云学术

Few-Electron Edge-State Quantum Dots in a Silicon Nanowire Field-Effect Transistor

Published:2014-03-14 Issue:4 Volume:14 Page:2094-2098
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Voisin Benoit¹,Nguyen Viet-Hung²,Renard Julien¹,Jehl Xavier¹,Barraud Sylvain³,Triozon François³,Vinet Maud³,Duchemin Ivan²,Niquet Yann-Michel²,de Franceschi Silvano¹,Sanquer Marc¹

Affiliation:

1. SPSMS, UMR-E CEA/UJF-Grenoble 1, INAC, 17 rue des Martyrs, 38054 Grenoble, France

2. SPMM, UMR-E CEA/UJF-Grenoble 1, INAC, 17 rue des Martyrs, 38054 Grenoble, France

3. CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble, France

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl500299h

Reference29 articles.

1. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

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