Tailoring the Interface Quality between HfO2 and GaAs via in Situ ZnO Passivation Using Atomic Layer Deposition
Author:
Affiliation:
1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea
2. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/am502048d
Reference31 articles.
1. The Characterization and Passivation of Fixed Oxide Charges and Interface States in the $\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{InGaAs}$ MOS System
2. Border Traps in Ge/III–V Channel Devices: Analysis and Reliability Aspects
3. Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2O3 gate dielectric
4. Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators
5. S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates
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