Interactive Effect of Hysteresis and Surface Chemistry on Gated Silicon Nanowire Gas Sensors
Author:
Affiliation:
1. The Department of Chemical Engineering and Russell Berrie Nanotechnology Institute, Technion—Israel Institute of Technology, Haifa 32000, Israel
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/am300288z
Reference60 articles.
1. Molecular Gating of Silicon Nanowire Field-Effect Transistors with Nonpolar Analytes
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