ZnO1–x Nanorod Arrays/ZnO Thin Film Bilayer Structure: From Homojunction Diode and High-Performance Memristor to Complementary 1D1R Application-Reference-Cited by-同舟云学术

ZnO1–x Nanorod Arrays/ZnO Thin Film Bilayer Structure: From Homojunction Diode and High-Performance Memristor to Complementary 1D1R Application

Published:2012-09-06 Issue:9 Volume:6 Page:8407-8414
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Huang Chi-Hsin¹,Huang Jian-Shiou¹,Lin Shih-Ming¹,Chang Wen-Yuan²,He Jr-Hau²,Chueh Yu-Lun¹

Affiliation:

1. Department of Materials Science & Engineering, National Tsing-Hua University, Hsinchu 30013, Taiwan, Republic of China,

2. Department of Electrical Engineering & Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan, Republic of China

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn303233r

Reference37 articles.

1. Magnetic Domain-Wall Racetrack Memory

2. Phase-change materials for rewriteable data storage

3. Nanoionics-based resistive switching memories

4. Resistive switching in transition metal oxides

5. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

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