Impact of Metal Salt Precursor on Low-Temperature Annealed Solution-Derived Ga-doped In2O3 Semiconductor for Thin-Film Transistors
Author:
Affiliation:
1. Device Materials Research Center, Korea Research Institute of Chemical Technology, 19 Sinseongno, Yuseong-gu, Daejeon 305-600, Korea
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/jp202522s
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