Organometallic vapor phase epitaxy of indium phosphide layers using the new precursor methylcyclopentadienylindium
Author:
Publisher
American Chemical Society (ACS)
Subject
Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis
Link
https://pubs.acs.org/doi/pdf/10.1021/ja00201a074
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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2. Single source precursor-based HV-MOCVD deposition of binary group 13-antimonide thin films;Surface and Coatings Technology;2007-09
3. Group 13/15 Organometallic Compounds—Synthesis, Structure, Reactivity and Potential Applications;Advances in Organometallic Chemistry;2003
4. Low temperature metalorganic chemical vapor deposition growth of InP using the new precursors pentamethylcyclopentadienylindium(I) and white phosphorus;Journal of Crystal Growth;2002-10
5. Synthesis and characterization of dihydrobis(3,5-dimethylpyrazolyl)borate complexes of gallium(III) and indium(III);Journal of Organometallic Chemistry;1996-04
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