Band Gap Modulation of the IV, III–V, and II–VI Semiconductors by Controlling the Solid Size and Dimension and the Temperature of Operation-Reference-Cited by-同舟云学术

Band Gap Modulation of the IV, III–V, and II–VI Semiconductors by Controlling the Solid Size and Dimension and the Temperature of Operation

Published:2011-11-08 Issue:47 Volume:115 Page:23338-23343
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Chen Yuming¹,Li Jianwei¹,Yang Xuexian¹,Zhou Zhaofeng¹,Sun Chang Q¹²

Affiliation:

1. Institute for Quantum Engineering and Micro-Nano Energy Technology, Key Laboratory of Low-Dimensional Materials and Application Technologies, and Faculty of Materials and Optoelectronic Physics, Xiangtan University, Hunan 411105, China

2. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp209933v

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4. Small-Diameter Silicon Nanowire Surfaces

5. Silicon Nanowire Band Gap Modification

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