TiS3 Nanoribbons: A Novel Material for Ultra-Sensitive Photodetection across Extreme Temperature Ranges

Author:

Talib Mohammad1,Tripathi Nishant2ORCID,Manzoor Samrah1,Sharma Prachi23,Pavelyev Vladimir24,Volkov Valentyn S.5ORCID,Arsenin Aleksey V.56ORCID,Novikov Sergey M.5ORCID,Mishra Prabhash12

Affiliation:

1. Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia (A Central University), New Delhi 110025, India

2. Samara National Research University, 34, Moskovskoye Shosse, Samara 443086, Russia

3. School of Electronics Engineering (SENSE), Vellore Institute of Technology (VIT), Vellore 632014, India

4. IPSI RAS—Branch of the FSRC “Crystallography and Photonics” RAS, Molodogvardeyskaya 151, Samara 443001, Russia

5. Center for Photonics & 2D Materials, Moscow Institute of Physics and Technology (MIPT), Dolgoprudny 141700, Russia

6. Laboratory of Advanced Functional Materials, Yerevan State University, Yerevan 0025, Armenia

Abstract

Photodetectors that can operate over a wide range of temperatures, from cryogenic to elevated temperatures, are crucial for a variety of modern scientific fields, including aerospace, high-energy science, and astro-particle science. In this study, we investigate the temperature-dependent photodetection properties of titanium trisulfide (TiS3)- in order to develop high-performance photodetectors that can operate across a wide range of temperatures (77 K–543 K). We fabricate a solid-state photodetector using the dielectrophoresis technique, which demonstrates a quick response (response/recovery time ~0.093 s) and high performance over a wide range of temperatures. Specifically, the photodetector exhibits a very high photocurrent (6.95 × 10−5 A), photoresponsivity (1.624 × 108 A/W), quantum efficiency (3.3 × 108 A/W·nm), and detectivity (4.328 × 1015 Jones) for a 617 nm wavelength of light with a very weak intensity (~1.0 × 10−5 W/cm2). The developed photodetector also shows a very high device ON/OFF ratio (~32). Prior to fabrication, the TiS3 nanoribbons were synthesized using the chemical vapor technique and characterized according to their morphology, structure, stability, and electronic and optoelectronic properties; this was performed using scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy, X-ray diffraction (XRD), thermogravimetric analysis (TGA), and a UV–Visible–NIR spectrophotometer. We anticipate that this novel solid-state photodetector will have broad applications in modern optoelectronic devices.

Funder

Russian Science Foundation

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Biochemistry,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry

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