Controlling the Atomic Layer Deposition of Titanium Dioxide on Silicon: Dependence on Surface Termination-Reference-Cited by-同舟云学术

Controlling the Atomic Layer Deposition of Titanium Dioxide on Silicon: Dependence on Surface Termination

Published:2013-09-19 Issue:39 Volume:117 Page:20250-20259
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

McDonnell Stephen¹,Longo Roberto C.¹,Seitz Oliver¹,Ballard Josh B.²,Mordi Greg¹,Dick Don¹,Owen James H. G.²,Randall John N.²,Kim Jiyoung¹,Chabal Yves J.¹,Cho Kyeongjae¹,Wallace Robert M.¹

Affiliation:

1. Materials Science and Engineering Department, University of Texas at Dallas, 800 W. Campbell Road, Richardson, Texas 75080, United States

2. Zyvex Laboratories, LLC, 1321 North Plano Road, Richardson, Texas 75081, United States

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp4060022

Reference48 articles.

1. Nanoscale patterning and oxidation of H‐passivated Si(100)‐2×1 surfaces with an ultrahigh vacuum scanning tunneling microscope

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4. Basic mechanisms of an atomic force microscope tip-induced nano-oxidation process of GaAs

5. Probe-Induced Native Oxide Decomposition and Localized Oxidation on 6H-SiC (0001) Surface: An Atomic Force Microscopy Investigation

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