Use of a High Electron-Affinity Molybdenum Dithiolene Complex to p-Dope Hole-Transport Layers-Reference-Cited by-同舟云学术

Use of a High Electron-Affinity Molybdenum Dithiolene Complex to p-Dope Hole-Transport Layers

Published:2009-08-14 Issue:35 Volume:131 Page:12530-12531
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Qi Yabing¹,Sajoto Tissa¹,Barlow Stephen¹,Kim Eung-Gun¹,Brédas Jean-Luc¹,Marder Seth R.¹,Kahn Antoine¹

Affiliation:

1. Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544-5263, and School of Chemistry and Biochemistry and Center for Organic Electronics and Photonics, Georgia Institute of Technology, Atlanta, Georgia 30332-0400

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/ja904939g

Reference22 articles.

1. Highly Efficient Organic Devices Based on Electrically Doped Transport Layers

2. Control of threshold voltage in pentacene thin-film transistors using carrier doping at the charge-transfer interface with organic acceptors

3. Incorporation of cobaltocene as an n-dopant in organic molecular films

4. Oxygen induced p-doping of α-nickel phthalocyanine vacuum sublimed films: Implication for its use in organic photovoltaics

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