Unintentional Hydrogen Incorporation into the SnO2 Electron Transport Layer by ALD and Its Effect on the Electronic Band Structure-Reference-Cited by-同舟云学术

Unintentional Hydrogen Incorporation into the SnO2 Electron Transport Layer by ALD and Its Effect on the Electronic Band Structure

Published:2021-10-11 Issue:10 Volume:4 Page:10896-10908
ISSN:2574-0962
Container-title:ACS Applied Energy Materials
language:en
Short-container-title:ACS Appl. Energy Mater.

Author:

Martínez-Puente Marcelo A.¹^ORCID,Tirado Juan²,Jaramillo Franklin²^ORCID,Garza-Hernández Raquel¹,Horley Paul¹,Silva Vidaurri L. Gerardo¹^ORCID,Aguirre-Tostado F. Servando¹^ORCID,Martínez-Guerra Eduardo¹^ORCID

Affiliation:

1. Centro de Investigación en Materiales Avanzados S.C. (CIMAV), Unidad Monterrey, Alianza Norte No. 202, Parque PIIT, Apodaca 66628, Nuevo León, México

2. Centro de Investigación, Innovación y Desarrollo de Materiales (CIDEMAT), Universidad de Antioquia (UdeA), Calle 79 No. 52-21, Medellín 050010, Antioquia, Colombia

Funder

Air Force Office of Scientific Research

Consejo Nacional de Ciencia y Tecnolog??a

Colombian Scientific Program, Ecosistema Cient??fico

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Materials Chemistry,Electrochemistry,Energy Engineering and Power Technology,Chemical Engineering (miscellaneous)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaem.1c01836

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