Transition of the NiOx Buffer Layer from a p-Type Semiconductor to an Insulator for Operation of Perovskite Solar Cells-Reference-Cited by-同舟云学术

Transition of the NiOx Buffer Layer from a p-Type Semiconductor to an Insulator for Operation of Perovskite Solar Cells

Published:2021-06-07 Issue:6 Volume:4 Page:5452-5465
ISSN:2574-0962
Container-title:ACS Applied Energy Materials
language:en
Short-container-title:ACS Appl. Energy Mater.

Author:

Seok Hae-Jun¹^ORCID,Park Jin-Hyeok¹,Yi Ahra²^ORCID,Lee Hanbin²,Kang Joohoon¹^ORCID,Kim Hyo Jung²,Kim Han-Ki¹^ORCID

Affiliation:

1. School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066, Seobu-ro, Jangan-gu, Suwon-si 16419, Gyeonggi-do, Republic of Korea

2. Department of Organic Material Science and Engineering, Pusan National University, Busan 46241, Republic of Korea

Funder

Korea Electric Power Corporation

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Materials Chemistry,Electrochemistry,Energy Engineering and Power Technology,Chemical Engineering (miscellaneous)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaem.1c00049

Reference82 articles.

1. Improving the stability and performance of perovskite solar cells via off-the-shelf post-device ligand treatment

2. All-Inorganic Metal Halide Perovskite Nanocrystals: Opportunities and Challenges

3. Grain-Boundary “Patches” by In Situ Conversion to Enhance Perovskite Solar Cells Stability

4. A Review on Halide Perovskite Film Formation by Sequential Solution Processing for Solar Cell Applications

5. Chemical Approaches for Stabilizing Perovskite Solar Cells

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