Growth and Photovoltaic Device Application of Cu2BaGe1–xSnxSe4 Films Prepared by Selenization of Sequentially Deposited Precursors-Reference-Cited by-同舟云学术

Growth and Photovoltaic Device Application of Cu2BaGe1–xSnxSe4 Films Prepared by Selenization of Sequentially Deposited Precursors

Published:2021-10-04 Issue:10 Volume:4 Page:11528-11536
ISSN:2574-0962
Container-title:ACS Applied Energy Materials
language:en
Short-container-title:ACS Appl. Energy Mater.

Author:

Kim Yongshin¹^ORCID,Mitzi David B.¹²^ORCID

Affiliation:

1. Department of Mechanical Engineering and Materials Science, Duke University, Durham, North Carolina 27708, United States

2. Department of Chemistry, Duke University, Durham, North Carolina 27708, United States

Funder

Basic Energy Sciences

Division of Electrical, Communications and Cyber Systems

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Materials Chemistry,Electrochemistry,Energy Engineering and Power Technology,Chemical Engineering (miscellaneous)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaem.1c02259

Reference53 articles.

1. Classification of Lattice Defects in the Kesterite Cu2ZnSnS4and Cu2ZnSnSe4Earth-Abundant Solar Cell Absorbers

2. Abundance of CuZn + SnZn and 2CuZn + SnZn defect clusters in kesterite solar cells

3. The electronic consequences of multivalent elements in inorganic solar absorbers: Multivalency of Sn in Cu2ZnSnS4

4. Is the Cu/Zn Disorder the Main Culprit for the Voltage Deficit in Kesterite Solar Cells?

5. Prospects and performance limitations for Cu–Zn–Sn–S–Se photovoltaic technology

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Towards efficiency enhancement of earth abundant Cu2BaSn(S,Se)4 chalcogenide solar cell using In2S3 as efficient electron transport layer;Solar Energy;2024-07

2. Carbon Impurity Minimization of Solution-Processed, Thin-Film Photovoltaics via Ligand Engineering of CuInS₂ Nanoparticles;ACS Applied Energy Materials;2024-01-30

3. Exploration, Prediction, and Experimental Verification of Structure and Optoelectronic Properties in I₂-Eu-IV-X₄ (I = Li, Cu, Ag; IV = Si, Ge, Sn; X = S, Se) Chalcogenide Semiconductors;Chemistry of Materials;2023-12-18

4. Ag Alloying in Cu_2−yAg_yBa(Ge,Sn)Se₄ Films and Photovoltaic Devices;Solar RRL;2023-01-27

5. Alkali element (Li, Na, K, and Rb) doping of Cu₂BaGe_1−xSn_xSe₄ films;Journal of Materials Chemistry A;2023