Disorder Imposed Limits of Mono- and Bilayer Graphene Electronic Modification Using Covalent Chemistry-Reference-Cited by-同舟云学术

Disorder Imposed Limits of Mono- and Bilayer Graphene Electronic Modification Using Covalent Chemistry

Published:2013-01-24 Issue:2 Volume:13 Page:809-817
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Shih Chih-Jen¹,Wang Qing Hua¹,Jin Zhong¹,Paulus Geraldine L. C.¹,Blankschtein Daniel¹,Jarillo-Herrero Pablo¹,Strano Michael S.¹

Affiliation:

1. Department of Chemical Engineering and ‡Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl304632e

Reference56 articles.

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3. Ultrahigh electron mobility in suspended graphene

4. Boron nitride substrates for high-quality graphene electronics

5. Controlling the Electronic Structure of Bilayer Graphene

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