Mechanism of Arsine Adsorption on the Gallium-Rich GaAs(001)−(4 × 2) Surface-Reference-Cited by-同舟云学术

Mechanism of Arsine Adsorption on the Gallium-Rich GaAs(001)−(4 × 2) Surface

Published:2000-05-18 Issue:23 Volume:104 Page:5595-5602
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Fu Qiang¹,Li Lian¹,Li Connie H.¹,Begarney Michael J.¹,Law Daniel C.¹,Hicks Robert F.¹

Affiliation:

1. Chemical Engineering Department, University of California, Los Angeles, California 90095-1592, and Department of Physics and Laboratory for Surface Study, University of Wisconsin, Milwaukee, Wisconsin 53201

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp0005827

Reference39 articles.

1. Composition and structure of differently prepared GaAs(100) surfaces studied by LEED and AES

2. Observation of the atomic surface structure of GaAs(001) films grown by metalorganic vapor-phase epitaxy

3. MBE growth on vicinal GaAs(001) surfaces studied by scanning tunneling microscopy

4. Surface structures of tetrahedrally coordinated semiconductors: principles, practice, and universality

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