Strain-Induced Sulfur Vacancies in Monolayer MoS<sub>2</sub>-Reference-Cited by-同舟云学术

Strain-Induced Sulfur Vacancies in Monolayer MoS₂

Published:2023-08-25 Issue:9 Volume:5 Page:2584-2593
ISSN:2639-4979
Container-title:ACS Materials Letters
language:en
Short-container-title:ACS Materials Lett.

Author:

Albaridy Rehab¹²,Periyanagounder Dharmaraj¹,Naphade Dipti¹,Lee Chien-Ju³,Hedhili Mohamed¹,Wan Yi¹^ORCID,Chang Wen-Hao³,Anthopoulos Thomas D.¹^ORCID,Tung Vincent¹,Aljarb Areej⁴,Schwingenschlögl Udo¹^ORCID

Affiliation:

1. Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955−6900, Kingdom of Saudi Arabia

2. Physics and Astronomy Department, King Saud University, Riyadh 11451−2455, Saudi Arabia

3. Department of Physics, National Tsing Hua University, Hsinchu 30010, Taiwan

4. Department of Physics, King Abdulaziz University, Jeddah 21589, Kingdom of Saudi Arabia

Funder

King Abdullah University of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Biomedical Engineering,General Chemical Engineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acsmaterialslett.3c00507

Reference66 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Emerging Photoluminescence in Monolayer MoS2

3. Control of valley polarization in monolayer MoS2 by optical helicity

4. Charge carrier injection and transport engineering in two-dimensional transition metal dichalcogenides

5. Direct visualization of out-of-equilibrium structural transformations in atomically thin chalcogenides

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