Adsorption and Dissociation of Trimethylindium on an Indium Nitride Substrate. A Computational Study-Reference-Cited by-同舟云学术

Adsorption and Dissociation of Trimethylindium on an Indium Nitride Substrate. A Computational Study

Published:2009-12-07 Issue:52 Volume:113 Page:21765-21778
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Cardelino Beatriz H.¹,Cardelino Carlos A.¹

Affiliation:

1. Chemistry Department, Spelman College, Atlanta, Georgia 30314-4399, and School of Earth & Atmospheric Sciences, Georgia Institute of Technology, Atlanta, Georgia 30332-0340

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp907426r

Reference71 articles.

1. Electron mobility in indium nitride

2. InN, latest development and a review of the band-gap controversy

3. Unusual properties of the fundamental band gap of InN

4. Temperature dependence of the fundamental band gap of InN

5. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

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