Oxidation Mechanism of Si(111)-7 × 7 by Water: A Theoretical Study-Reference-Cited by-同舟云学术

Oxidation Mechanism of Si(111)-7 × 7 by Water: A Theoretical Study

Published:2013-07-23 Issue:30 Volume:117 Page:15763-15772
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Wang Xinlan¹,Duan Sai¹,Xu Xin¹

Affiliation:

1. Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, MOE Laboratory for Computational Physical Science, Collaborative Innovation Center of Chemistry for Energy Materials, Department of Chemistry, Fudan University, Shanghai, 200433, China

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp4051879

Reference37 articles.

1. The oxidation of TiC in dry oxygen, wet oxygen, and water vapor

2. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

3. Ellipsometric study of adsorption complexes on silicon

4. The adsorption of oxygen on a clean silicon surface

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2. Surface Orientation and Temperature Effects on the Interaction of Silicon with Water: Molecular Dynamics Simulations Using ReaxFF Reactive Force Field;The Journal of Physical Chemistry A;2017-01-13

3. Water wettability of Si(1 1 1) and (0 0 1) surfaces prepared to be reconstructed, atomic-hydrogen terminated and thinly oxidized in an ultrahigh vacuum chamber;Applied Surface Science;2015-09

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