Dissociation of Ethoxysilane and Methoxysilane on Si(001)-2 × 1 and Si(111)-7 × 7 at Room Temperature: A Comparative Study Using Synchrotron Radiation Photoemission-Reference-Cited by-同舟云学术

Dissociation of Ethoxysilane and Methoxysilane on Si(001)-2 × 1 and Si(111)-7 × 7 at Room Temperature: A Comparative Study Using Synchrotron Radiation Photoemission

Published:2014-10-10 Issue:42 Volume:118 Page:24397-24406
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Tissot Héloise¹²³,Gallet Jean-Jacques¹²³,Bournel Fabrice¹²³,Pierucci Debora¹²³,Silly Mathieu³,Sirotti Fausto³,Rochet François¹²³

Affiliation:

1. Sorbonne Universités, UPMC Univ Paris 06, UMR 7614, Laboratoire de Chimie Physique Matière et Rayonnement, 11 rue Pierre et Marie Curie, 75231 Paris Cedex 05, France

2. CNRS, UMR 7614, LCPMR, 75005 Paris, France

3. Synchrotron SOLEIL, L’Orme des Merisiers, 91190 Saint-Aubin, Gif sur Yvette, France

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp5050767

Reference44 articles.

1. SiO2 Films from Tetraethoxysilane‐Based LPCVD: An Experimental Investigation of the By‐Product‐Inhibited Deposition Mechanism

2. ALD of SiO[sub 2] at Room Temperature Using TEOS and H[sub 2]O with NH[sub 3] as the Catalyst

3. Nanometer-Thick Conformal Pore Sealing of Self-Assembled Mesoporous Silica by Plasma-Assisted Atomic Layer Deposition

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